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Transistors
2SC4656J
Silicon NPN epitaxial planar type
1.60+0.05 -0.03 1.000.05 3
1.600.05 0.85+0.05 -0.03 (0.375) 0.800.05
For high-frequency amplification Complementary to 2SA1791J Features
* High transition frequency fT * Small collector output capacitance (Common base, input open circuited) Cob * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.270.02
Unit: mm
0.12+0.03 -0.01
1
2
(0.80)
(0.50)(0.50)
0 to 0.02
5
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 50 5 50 125 125 -55 to +125 Unit V V V mA mW C C
1 : Base 2 : Emitter 3 : Collector
0.70+0.05 -0.03
5
EIAJ : SC-89 SSMini3-F1 Package
Marking Symbol: AM
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio
*
Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob
Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz
Min 50 50 5
Typ
Max
Unit V V V A A V MHz pF
0.1 100 200 0.06 250 1.5 500 0.3
Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 200 to 400 R 250 to 500
0.10 max.
Publication date: September 2004
SJC00308AED
1
2SC4656J
PC Ta
140
60 Ta = 25C IB = 100 A
IC VCE
50
IC VBE
VCE = 10 V 40
90 A 80 A 70 A
Collector power dissipation PC (mW)
120 100 80 60 40 20 0
50
40
Collector current IC (mA)
Collector current IC (mA)
25C 30 Ta = 85C 20 -25C
30
60 A 50 A
20
10
10
0
40
80
120
0 0 2 4 6 8 10 12
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
1 IC / IB = 10
hFE IC
VCE = 10 V Ta = 85C
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
10 f = 1 MHz Ta = 25C
700 600 500 400 300 200 100 0
Forward current transfer ratio hFE
25C
0.1 Ta = 85C -25C 25C
1
-25C
0.01 0.1
0.1
1
10
100
1
10
100
0
10
20
30
40
Collector current IC (mA)
Collector current IC (mA)
Collector-base voltage VCB (V)
2
SJC00308AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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